IMPACT IONIZATION RATES OF HOLES IN ALXGA1-XSB

被引：9

作者：

KUWATSUKA, H

MIKAWA, T

MIURA, S

YASUOKA, N

ITO, M

TANAHASHI, T

WADA, O

机构：

[1] Fujitsu Laboratories Ltd., Atsugi 243-01

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.349455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper discusses the impact ionization rates of holes in Al(x)Ga1-xSb near x = 0.06, where resonance impact ionization is expected. Resonance impact ionization did not occur in a range of the electric field we studied. We evaluate the impact ionization of holes at the spin-split-off band theoretically, and show that our measured result is reasonable.

引用

收藏

页码：2169 / 2172

页数：4

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