FAR-INFRARED PHOTOCONDUCTIVITY IN HIGH-PURITY EPITAXIAL GAAS

被引：35

作者：

STILLMAN, GE

WOLFE, CM

MELNGAILIS, I

PARKER, CD

TANNENWALD, PE

DIMMOCK, JO

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

APPLIED PHYSICS LETTERS | 1968年 / 13卷 / 03期

关键词：

D O I：

10.1063/1.1652525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Extrinsic far-infrared photoconductivity has been observed at 4.2°K in high-purity n-type epitaxial layers of GaAs grown on Cr-doped semi-insulating GaAs substrates. Measurements of the responsivity and noise in the detection system at 300 Hz in a 1-Hz bandwidth yield an NEP of 1.2 × 10 -11 W at 195 μ, 1.4 × 10-12 W at 337 μ and 6 × 10-11 W at 902 μ. The time constant of the detector has been determined to be shorter than 1 μsec using a Ge avalanche modulator to chop the incident radiation. A time constant of about 5 nsec has been measured using impact impurity ionization in the GaAs. © 1968 The American Institute of Physics.

引用

页码：83 / +

页数：1

共 12 条

[1]

BOLGER DE, 1967, 1966 P INT S GAAS RE, P16

[2] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J].