THERMAL EXPANSION OF SPUTTERED SILICON NITRIDE FILMS

被引：67

作者：

BURKHARDT, PJ

MARVEL, RF

机构：

[1] IBM Components Division, East Fishkill Laboratory, Hopewell Junction, New York

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 06期

关键词：

D O I：

10.1149/1.2412081

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：864 / +

页数：1

共 9 条

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[4]

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[7] THERMAL EXPANSION OF SILICON [J].

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[8]

POPPER P, 1961, BRIT CERAM T, V60, P603

[9] THERMAL EXPANSION COEFFICIENT OF A PYROLITICALLY DEPOSITED SILICON NITRIDE FILM [J].

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KISHINO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (10) :1252-&

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