DEEP-LEVEL STATES AND ELECTRICAL-PROPERTIES OF GAAS GROWN AT 250-DEGREES-C

被引：4

作者：

DARMO, J ^{[1
]}

DUBECKY, F ^{[1
]}

KORDOS, P ^{[1
]}

FORSTER, A ^{[1
]}

LUTH, H ^{[1
]}

机构：

[1] KFA JULICH,RES CTR,INST THIN FILM & ION TECHNOL,D-52425 JULICH,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

关键词：

DEFECT FORMATION; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY;

D O I：

10.1016/0921-5107(94)90090-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deep-level states in a molecular beam epitaxial GaAs layer grown at 250 degrees C were studied by admittance transient spectroscopy. The influence of isochronal annealing was investigated. The as-grown GaAs layer contains shallower, acceptor-like, deep-level states in significant concentrations, and layers annealed at 630 degrees C are dominated by deep EL3- and EL2-like defects. For medium annealing temperatures, a gradual decrease in concentration of shallower, deep-level states is observed, whereas the apparent concentrations of deeper, donor-like, deep-level states increase. On the basis of the study presented, a model of investigated GaAs layer is discussed.

引用

页码：393 / 396

页数：4

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