TUNABLE PHOTODETECTORS AND LIGHT-EMITTING-DIODES FOR WAVELENGTH-DIVISION MULTIPLEXING

被引：7
作者：
STRITE, S
UNLU, MS
机构：
[1] BOSTON UNIV,CTR PHOTON RES,BOSTON,MA 02215
[2] BOSTON UNIV,DEPT ELECT COMP & SYST ENGN,BOSTON,MA 02215
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 08期
关键词：
LIGHT EMITTING DIODES; PHOTODETECTORS; WAVELENGTH DIVISION MULTIPLEXING; MICROMACHINING;
D O I：
10.1049/el:19950452
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors propose and analyse a hybrid device structure which extends the dynamic tuning range of vertical-cavity photodiodes and emitters. The device consists of a conventional, epitaxial pin junction quantum-well diode grown on a quarter-wave mirror stack. The upper mirror is attached to the underside of a micromachined membrane fabricated on top of the epilayer. This configuration allows the upper mirror to be electrostatically deflected towards the episurface, reducing the overall vertical cavity length which tunes the resonance wavelength over the entire free spectral range of the cavity. Simulations of the device indicate that eight-channel operation between 900 and 1000 nm can be achieved with low crosstalk. It is expected that this device will find use in wavelength-division-multiplexing applications.
引用
收藏
页码：672 / 674
页数：3
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