FULLY RELAXED POINT-DEFECTS IN CRYSTALLINE SILICON

被引：52

作者：

SONG, EG

KIM, E

LEE, YH

HWANG, YG

机构：

[1] JEONBUK NATL UNIV,DEPT PHYS,JEONJU 560756,SOUTH KOREA

[2] WONKWANG UNIV,DEPT PHYS,IRI 570749,SOUTH KOREA

[3] JEONBUK NATL UNIV,SEMICOND PHYS RES CTR,JEONJU 560756,SOUTH KOREA

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.48.1486

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied intrinsic point defects in crystalline silicon via a tight-binding molecular-dynamics scheme. The intrinsic defects studied in this work are the vacancy, the interstitial, the divacancy, the split divacancy, and the vacancy-interstitial complex. Fully relaxed geometries, gap states, and formation energies are investigated. It is shown that the relaxation effects cannot be neglected, in particular, in the peak position of band-gap states.

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页码：1486 / 1489

页数：4

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