LUMINESCENCE FROM IN0.5GA0.5P PREPARED BY VAPOR-PHASE EPITAXY

被引：34

作者：

KRESSEL, H ^{[1
]}

NUESE, CJ ^{[1
]}

LADANY, I ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 07期

关键词：

D O I：

10.1063/1.1662745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3266 / 3272

页数：7

共 26 条

[1] RADIATIVE PROCESSES IN DIRECT AND INDIRECT BAND GAP IN1-XGAXP [J].

BACHRACH, RZ ;

HAKKI, BW .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :5102-&

[2] MASS-SPECTROMETRIC AND THERMODYNAMIC STUDIES OF CVD OF SOME III-V COMPOUNDS [J].

BAN, VS .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :19-&

[3] FAR-INFRARED PHOTOCONDUCTIVITY FROM SHALLOW DONORS IN N-INP [J].

CHAMBERL.JM ;

ERGUN, HB ;

GEHRING, KA ;

STRADLIN.RA .

SOLID STATE COMMUNICATIONS, 1971, 9 (18) :1563-&

[4] PHOTOLUMINESCENCE OF UNDOPED GAXIN1-XP ALLOYS [J].

CHEVALLIER, J ;

LAUGIER, A .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (02) :437-+

[5]

DEAN PJ, 1970, MATER SCI ENG, V6, P69

[6] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J].

EAGLES, DM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) :76-83

[7]

ENSTROM RE, 1973, 4 P INT S GALL ARS R, P37

[8] FREE AND BOUND ELECTRON TRANSITIONS TO ACCEPTORS IN INDIUM PHOSPHIDE [J].

FISCHBACH, JU ;

PILKUHN, MH ;

BENZ, G ;

STATH, N .

SOLID STATE COMMUNICATIONS, 1972, 11 (05) :725-+

[9]

Heim U., 1970, J LUMIN, V1, P542

[10] DETERMINING COMPOSITION OF INP-GAP ALLOYS USING VEGARDS LAW [J].

HERITAGE, RJ ;

PORTEOUS, P ;

SHEPPARD, BJ .

JOURNAL OF MATERIALS SCIENCE, 1970, 5 (08) :709-&

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