AZIDE-PHENOLIC RESIN PHOTORESISTS FOR DEEP UV LITHOGRAPHY

被引：90

作者：

IWAYANAGI, T

KOHASHI, T

NONOGAKI, S

MATSUZAWA, T

DOUTA, K

YANAZAWA, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 11期

关键词：

D O I：

10.1109/T-ED.1981.20605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1306 / 1310

页数：5

共 18 条

[1]

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[2] PERFORMANCE LIMITS IN 1-1 UV PROJECTION LITHOGRAPHY [J].

BRUNING, JH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1925-1928

[3] MICROLITHOGRAPHY - KEY TO SOLID-STATE DEVICE FABRICATION [J].

DECKERT, CA ;

ROSS, DL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :C45-C56

[4] CHLOROMETHYLATED POLYSTYRENE AS A DRY ETCHING-RESISTANT NEGATIVE RESIST FOR SUB-MICRON TECHNOLOGY [J].

IMAMURA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) :1628-1630

[5] AZIDE PHOTORESISTS FOR DEEP UV LITHOGRAPHY [J].

IWAYANAGI, T ;

KOHASHI, T ;

NONOGAKI, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) :2759-2760

[6]

KOHASHI T, 1979, PHOTOGR SCI ENG, V23, P168

[7]

KOSAR J, 1965, LIGHT SENSITIVE SYST, P359

[8] DEEP UV LITHOGRAPHY [J].

LIN, BJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1317-1320

[9] DEEP UV 1-1 PROJECTION LITHOGRAPHY UTILIZING NEGATIVE RESIST MRS [J].

MATSUZAWA, T ;

TOMIOKA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) :1284-1288

[10]

MATSUZAWA T, 1981, ELECTRON DEVIC LETT, V2, P90, DOI 10.1109/EDL.1981.25352

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