DEMONSTRATION OF OXYGEN IN SILICON SINGLE-CRYSTALS USING ESR

被引:5
作者
NEUBRAND, H [1 ]
机构
[1] AEG TELEFUNKEN,FORSCH INST,FRANKFURT,WEST GERMANY
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 17卷 / 02期
关键词
D O I
10.1002/pssa.2210170209
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:459 / 470
页数:12
相关论文
共 35 条
[1]  
ADES S, 1972, FRUHJAHRSTAGUNG DPG
[2]  
AGGARWAL RL, 1965, PHYS REV A, V138, P882
[3]   DETERMINATION OF PARTS PER BILLION OF OXYGEN IN SILICON [J].
BAKER, JA .
SOLID-STATE ELECTRONICS, 1970, 13 (11) :1431-&
[4]  
BAKER JA, 1971, DOW CORNING BERICHT
[5]  
Boltaks B.I., 1963, DIFFUSION SEMICONDUC
[6]  
BORBYE KE, 1967, 47215 HALD TOPS B
[7]   RAMAN SPIN-LATTICE RELAXATION OF SHALLOW DONORS IN SILICON [J].
CASTNER, TG .
PHYSICAL REVIEW, 1963, 130 (01) :58-&
[8]   CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM [J].
CORBETT, JW ;
MCDONALD, RS ;
WATKINS, GD .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) :873-&
[9]   REACTIONS OF GROUP-III ACCEPTORS WITH OXYGEN IN SILICON CRYSTALS [J].
FULLER, CS ;
DOLEIDEN, FH ;
WOLFSTIRN, K .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (3-4) :187-203
[10]   AN OPTICAL STUDY OF LITHIUM AND LITHIUM-OXYGEN COMPLEXES AS DONOR IMPURITIES IN SILICON [J].
GILMER, TE ;
FRANKS, RK ;
BELL, RJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (08) :1195-&