SELECTIVE AREA OXIDATION OF SILICON WITH A SCANNING FORCE MICROSCOPE

被引：215
作者：
DAY, HC [1 ]
ALLEE, DR [1 ]
机构：
[1] ARIZONA STATE UNIV,DEPT ELECT ENGN,TEMPE,AZ 85287
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 21期
关键词：
D O I：
10.1063/1.109259
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub-100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.
引用
收藏
页码：2691 / 2693
页数：3
相关论文
共 12 条
  • [1] NANOMETER-SCALE HOLE FORMATION ON GRAPHITE USING A SCANNING TUNNELING MICROSCOPE
    ALBRECHT, TR
    DOVEK, MM
    KIRK, MD
    LANG, CA
    QUATE, CF
    SMITH, DPE
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (17) : 1727 - 1729
  • [2] MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR
    DAGATA, JA
    SCHNEIR, J
    HARARY, HH
    EVANS, CJ
    POSTEK, MT
    BENNETT, J
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (20) : 2001 - 2003
  • [3] SURFACE MODIFICATION OF A-SI-H WITH A SCANNING TUNNELING MICROSCOPE OPERATED IN AIR
    JAHANMIR, J
    WEST, PE
    HSIEH, S
    RHODIN, TN
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) : 2064 - 2068
  • [4] NANOMETER-SCALE ELECTROCHEMICAL DEPOSITION OF SILVER ON GRAPHITE USING A SCANNING TUNNELING MICROSCOPE
    LI, WJ
    VIRTANEN, JA
    PENNER, RM
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (10) : 1181 - 1183
  • [5] NANOMETER-SCALE LITHOGRAPHY USING THE ATOMIC FORCE MICROSCOPE
    MAJUMDAR, A
    ODEN, PI
    CARREJO, JP
    NAGAHARA, LA
    GRAHAM, JJ
    ALEXANDER, J
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (19) : 2293 - 2295
  • [6] LITHOGRAPHY WITH THE SCANNING TUNNELING MICROSCOPE
    MCCORD, MA
    PEASE, RFW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 86 - 88
  • [7] DIRECT DEPOSITION OF 10-NM METALLIC FEATURES WITH THE SCANNING TUNNELING MICROSCOPE
    MCCORD, MA
    KERN, DP
    CHANG, THP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1877 - 1880
  • [8] LIFT-OFF METALLIZATION USING POLY(METHYL METHACRYLATE) EXPOSED WITH A SCANNING TUNNELING MICROSCOPE
    MCCORD, MA
    PEASE, RFW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 293 - 296
  • [9] EXPOSURE OF CALCIUM-FLUORIDE RESIST WITH THE SCANNING TUNNELING MICROSCOPE
    MCCORD, MA
    PEASE, RFW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 430 - 433
  • [10] NANOLITHOGRAPHY ON SEMICONDUCTOR SURFACES UNDER AN ETCHING SOLUTION
    NAGAHARA, LA
    THUNDAT, T
    LINDSAY, SM
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (03) : 270 - 272
12