X-RAY-SCATTERING STUDIES OF INTERMEDIATE-RANGE ORDER IN AMORPHOUS GESE2

被引：30
作者：
FISCHERCOLBRIE, A
FUOSS, PH
机构：
[1] STANFORD UNIV,DEPT MAT SCI,STANFORD,CA 94305
[2] AT&T BELL LABS,HOLMDEL,NJ 07733
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1990年 / 126卷 / 1-2期
基金：
美国国家卫生研究院; 美国国家科学基金会;
关键词：
D O I：
10.1016/0022-3093(90)91020-R
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The intermediate-range order in thin, amorphous GeSe2 films has been analyzed by studying the evolution of order as a function of film thickness. The results are in excellent agreement with the chemically ordered random network model and disagree strongly with the two-dimensional raft models of a-GeSe2. The techniques developed can be used generally to study the structures of amorphous and poorly crystallized layers on substrates. © 1990.
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页码：1 / 34
页数：34
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