X-RAY-DIFFRACTION INVESTIGATIONS OF STRUCTURAL DISTORTIONS OF ION-IMPLANTED SEMICONDUCTOR SINGLE-CRYSTALS

被引：5

作者：

SEDRAKYAN, AG ^{[1
]}

HAROUTYUNYAN, VS ^{[1
]}

BEZIRGANYAN, PH ^{[1
]}

SUBOTOWICZ, M ^{[1
]}

TROUNI, KG ^{[1
]}

机构：

[1] MARIE CURIE SKLODOWSKA UNIV,INST PHYS,PL-20031 LUBLIN,POLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 123卷 / 01期

关键词：

Lang Method - Structural Distortions - X-Ray Topography;

D O I：

10.1002/pssa.2211230107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structural distortions of the surface layer of Si single crystals implanted by monoenergetic Au ions (ion energy 120 keV and 180 keV, doses 10(13) ions/cm2 and 2 x 10(14) ions/cm2, respectively) are studied by X-ray diffraction. Traverse-type topographs are obtained by Lang's method. A method to determine the thickness of the distorted layer using interference pattern contrast measurements is suggested.

引用

页码：83 / 99

页数：17

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