ORIGIN OF SHARP NEAR-INFRARED TRANSITIONS IN CHROMIUM DOPED III-V SEMICONDUCTORS

被引：41

作者：

WHITE, AM ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 03期

关键词：

D O I：

10.1016/0038-1098(79)90122-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is contended that the sharp emission and absorption lines seen in GaAs:Cr and GaP:Cr at 0.839 eV and 1.029 eV are due to a type of excitonic recombination at isoelectronic sites involving chromium. This assignment contrasts strongly with the widely accepted model involving an internal d-d transition at isolated Cr2+ centres. The new description satisfactorily accounts for many puzzling features relating to the high transition energies, phonon coupling, Stokes shifts, stress splittings, non-correlation of optical and EPR data and the large multiplicity of fine structure seen in high resolution optical spectroscopy. © 1979.

引用

页码：205 / 208

页数：4

共 30 条

[1] CRYSTAL-FIELD SPECTRA OF 3DN IMPURITIES IN2-6 AND 3-5 COMPOUND SEMICONDUCTORS [J].