ION-BEAM ENHANCED DIFFUSION OF B DURING SI MOLECULAR-BEAM EPITAXY

被引：10

作者：

PUKITE, PR

IYER, SS

SCILLA, GJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 10期

关键词：

D O I：

10.1063/1.100807

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：916 / 918

页数：3

共 14 条

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[2]

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[4]

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[5]

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[7] POTENTIAL-ENHANCED DOPING OF SI GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[8]

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[9] IMPLANTATION DAMAGE AND THE ANOMALOUS TRANSIENT DIFFUSION OF ION-IMPLANTED BORON [J].

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[10]

OTA Y, 1983, THIN SOLID FILMS, V106, P1

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