RESONANT RAMAN EFFECT IN SEMICONDUCTORS

被引：183
作者：
SCOTT, JF
LEITE, RCC
DAMEN, TC
机构：
[1] Bell Telephone Laboratories, Holmdel
来源：
PHYSICAL REVIEW | 1969年 / 188卷 / 03期
关键词：
D O I：
10.1103/PhysRev.188.1285
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Light scattering experiments on semiconductors are discussed in which the energy of the incident photon from the laser or that of the Raman-scattered photon is nearly coincident with that of an electronic transition in the scatterer. Experimental data on ZnTe, CdS, InAs, ZnSe, and GaP are analyzed, and a discussion of LO-overtone scattering mechanisms is presented. Some additional experiments are proposed and discussed. © 1969 The American Physical Society.
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页码：1285 / &
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