RESONANT RAMAN EFFECT IN SEMICONDUCTORS

被引：184

作者：

SCOTT, JF

LEITE, RCC

DAMEN, TC

机构：

[1] Bell Telephone Laboratories, Holmdel

来源：

PHYSICAL REVIEW | 1969年 / 188卷 / 03期

关键词：

D O I：

10.1103/PhysRev.188.1285

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Light scattering experiments on semiconductors are discussed in which the energy of the incident photon from the laser or that of the Raman-scattered photon is nearly coincident with that of an electronic transition in the scatterer. Experimental data on ZnTe, CdS, InAs, ZnSe, and GaP are analyzed, and a discussion of LO-overtone scattering mechanisms is presented. Some additional experiments are proposed and discussed. © 1969 The American Physical Society.

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页码：1285 / &

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