DIFFUSION OF SILICON IN ALUMINUM

被引：169

作者：

FUJIKAWA, SI ^{[1
]}

HIRANO, KI ^{[1
]}

FUKUSHIMA, Y ^{[1
]}

机构：

[1] TYOTA CENT LAB,NAGOYA 468,JAPAN

来源：

METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE | 1978年 / 9卷 / 12期

关键词：

D O I：

10.1007/BF02663412

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1811 / 1815

页数：5

共 28 条

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BLATT, FJ
[J]. PHYSICAL REVIEW, 1957, 108 (02): : 285 - 290
[7] Buckle H, 1943, Z ELKTROCHEM ANGEW P, V49, P238
[8] A DETERMINATION OF BINDING FREE ENERGY BETWEEN VACANCIES AND SILICON SOLUTE ATOMS IN ALUMINIUM USING AN EQUILIBRIUM METHOD
BURKE, J
KING, AD
[J]. PHILOSOPHICAL MAGAZINE, 1970, 21 (169): : 7 - &
[9] DARKEN LS, 1948, T AM I MIN MET ENG, V175, P184
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