LOW FREQUENCY CURRENT FLUCTUATIONS IN A GAAS GUNN DIODE

被引：6

作者：

MATSUNO, K

机构：

[1] Central Research Laboratories, Nippon Electric Company, Ltd., Kawasaki

来源：

APPLIED PHYSICS LETTERS | 1968年 / 12卷 / 12期

关键词：

D O I：

10.1063/1.1651875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low frequency noise spectrum and electrical conductivity of a GaAs Gunn diode are presented. Based on these results, we suggest that the observed FM noise spectrum of Gunn oscillators with -9 dB/octave slope of noise-to-carrier ratio may also be due to current fluctuations with l/f characteristic resulting from electron trapping. © 1968 The American Institute of Physics.

引用

页码：404 / &

共 6 条

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[4]

MATSUNO K, 1968, P IEEE, V56, P105

[5] QUANTUM-TRANSPORT THEORIES AND MULTIPLE SCATTERING IN DOPED SEMICONDUCTORS .2. MOBILITY OF N-TYPE GALLIUM ARSENIDE [J].

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PHYSICAL REVIEW, 1967, 160 (03) :618-&

[6] QUANTUM-TRANSPORT THEORIES AND MULTIPLE SCATTERING IN DOPED SEMICONDUCTORS .I. FORMAL THEORY [J].

MOORE, EJ .

PHYSICAL REVIEW, 1967, 160 (03) :607-&

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