ANALYSIS OF STORED CHARGE VOLATILITY IN AN MAOS MEMORY-ELEMENT

被引:2
作者
ANAND, KV [1 ]
SAMPURANSINGH [1 ]
机构
[1] UNIV SOUTHAMPTON,DEPT ELECT ENGN,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND
关键词
D O I
10.1016/0040-6090(78)90016-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:361 / 366
页数:6
相关论文
共 6 条
[1]  
Frenkel J., 1938, TECH PHYS USSR, V5, P685
[2]  
JAHNKE E, 1960, TABLES HIGHER FUNCTI, P17
[3]  
ROSS EC, 1969, RCA REV, V30, P366
[4]   CONDUCTION AND CHARGE STORAGE IN A DOUBLE-DIELECTRIC MAOS STRUCTURE FOR MEMORY APPLICATIONS [J].
SAMPURANSINGH ;
ANAND, KV .
THIN SOLID FILMS, 1978, 48 (03) :353-360
[5]   STUDY OF CHARGE STORAGE BEHAVIOR IN METAL-ALUMINA DIOXIDE-SILICON(MAOS) FIELD-EFFECT TRANSISTOR [J].
SATO, S ;
YAMAGUCH.T .
SOLID-STATE ELECTRONICS, 1974, 17 (04) :367-375
[6]  
Wallmark J. T., 1969, RCA Review, V30, P335