A STUDY OF CONTRAST BANDS IN BETA-SIC WHISKERS

被引：21

作者：

COMER, JJ

机构：

[1] Air Force Cambridge Research Laboratories L. G. Hanscom Field, Bedford, MA

来源：

MATERIALS RESEARCH BULLETIN | 1969年 / 4卷 / 05期

关键词：

D O I：

10.1016/0025-5408(69)90032-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diffraction contrast bands normal to the growth direction in thin β-SiC whiskers are often observed. From selected area diffraction and dark-field electron microscopy it was determined that the bands are caused by microtwins, many of which are less than 50 Å in thickness. Non-parallelism of the bands occurs due to distortion of the lattice planes when the crystal is bent or twisted. Within the streaks resulting from the elongation of intensity regions in a direction normal to the thin lamellae subsidiary maxima can be resolved. © 1969.

引用

页码：279 / &

共 6 条

[1] ANOMALOUS SPOTS IN ELECTRON DIFFRACTION PATTERNS OF LAMELLAR MIXTURE OF 2 CLOSED-PACKED PHASES [J].