Modelling and off-line optimization of a 300 mm rapid thermal processing system

被引：0

作者：

Tillmann, A ^{[1
]}

Buschbaum, S ^{[1
]}

Frigge, S ^{[1
]}

Kreiser, U ^{[1
]}

Loffelmacher, D ^{[1
]}

Theilig, T ^{[1
]}

Schmid, P ^{[1
]}

机构：

[1] STEAG AST Elekt GmbH, D-89160 Darmstadt, Germany

来源：

RAPID THERMAL PROCESSING | 1999年 / 84卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The modelling of a new 300 mm rapid thermal processing (RTP) system is described. Conventional raytracing techniques are used to determine lamp intensity distributions on both 200 and 300 mm wafers. Simulation results are verified using the 'difference method' (difference between two process parameter distributions such as oxide thickness, where the absolute power of one single lamp is varied). Wafer rotation is incorporated in the model and its influence on the temperature distribution will be discussed. Off-line optimization of the temperature distribution is utilized using model-based control. Experimental results of implant annealing on both 200 and 300 mm are shown and critical parameters influencing the temperature uniformity are discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：181 / 186

页数：6