PHOTOINDUCED NEAR-SURFACE ELECTRIC-FIELD SCREENING IN GAAS/ALGAAS MQW STRUCTURES

The paper is devoted to the study of interaction mechanisms between quantized states and neighbouring surfaces. The surface/well interaction was detected by photoluminescence (PL)) of quantum wells (QW) located at nanometric distances from the structure surface. The redshift and the strong quenching of QW PL line were observed with thinning of the top barrier by wet etching. The mechanism accounting for the band bending and quantum confined Stark effect is maintained In oreder to study field screening processes tile QW PL was investigated in a wide temperature and excitation power ranges. Under strong pumping tile indication on field-induced charge buildup in near-surface QW was found due to observation of PL line broadening effect, It is shown that the]after process can lead to the transition of near-surface field screening pattern from linear to pronounced steplike shape.