ANALYSIS OF TEMPERATURE-DEPENDENT OPTICAL GAIN OF STRAINED-QUANTUM-WELL TAKING ACCOUNT OF CARRIERS IN THE SCH LAYER

被引：59

作者：

ISHIKAWA, H ^{[1
]}

SUEMUNE, I ^{[1
]}

机构：

[1] HOKKAIDO UNIV,ELECTR SCI RES INST,KITA KU,SAPPORO,HOKKAIDO 060,JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 03期

关键词：

D O I：

10.1109/68.275484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of optical gain in strained quantum well is analyzed taking account of carriers in the separate confinement heterostructure (SCH) layer. Taking account of these carriers in the SCH layer can explain to a considerable extent the difference in the temperature performance between the lambda = 0.98 mum laser and lambda = 1.3 mum laser. It is shown that well depth plays a crucial role for the temperature dependence of optical gain. A strained quantum well on an InGaAs ternary substrate is shown to give a high gain with a small temperature dependence.

引用

页码：344 / 347

页数：4

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