EFFECTS OF EXTRA LOW-FREQUENCY NOISE INJECTION ON MICROWAVE SIGNALS GENERATED BY A GAIN-SWITCHED SEMICONDUCTOR-LASER

被引：6
|
作者：
LIMA, CR
DAVIES, PA
机构：
[1] Optical Communications Group, Electronic Engineering Laboratories, University of Kent, Canterbury, Kent
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 08期
关键词：
D O I：
10.1063/1.112158
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-frequency upconverted noise (1/f laser intensity noise and the low-frequency noise of the driver source) has been identified as the dominant noise generation mechanism in microwave signals generated by a Fabry-Perot gain-switched semiconductor laser. An experimental investigation is carried out using extra low-frequency noise injection added to the drive signal. Results show the dependence of the broadband intensity noise level, formed by the overlapping of the upconverted noise sidebands present at each harmonic, on gain-switching input parameters.
引用
收藏
页码：950 / 952
页数：3
相关论文
共 50 条
  • [1] DEGRADATION OF MICROWAVE SIGNALS GENERATED BY A MODELOCKED SEMICONDUCTOR-LASER DUE TO UP-CONVERSION OF LOW-FREQUENCY NOISE
    LIMA, CR
    DAVIES, PA
    ELECTRONICS LETTERS, 1995, 31 (08) : 641 - 642
  • [2] GAIN-SWITCHED SEMICONDUCTOR-LASER AMPLIFIER AS AN ULTRAFAST DYNAMICAL OPTICAL GATE
    SCHOLL, E
    KETTERER, K
    BOTTCHER, EH
    BIMBERG, D
    APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY, 1988, 46 (01): : 69 - 77
  • [3] FIBEROPTIC SEPARATION AND COMPRESSION OF GAIN-SWITCHED MULTIMODE SEMICONDUCTOR-LASER PULSES
    LEE, YT
    TAKAHASHI, R
    KAMIYA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (01): : L89 - L92
  • [4] Degradation o microwave signals generated by a modelocked semiconductor laser due to up-conversion of low-frequency noise
    Univ of Kent, Kent, United Kingdom
    Electron Lett, 8 (641-642):
  • [5] Nonlinear Dynamics of Optical Frequency Combs Generated by Gain-Switched Semiconductor Lasers Subject to Optical Injection
    Quirce, A.
    Rosado, A.
    Diez, J.
    Perez-Serrano, A.
    Tijero, J. M. G.
    Valle, A.
    Pesquera, L.
    Esquivias, I
    2020 22ND INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON 2020), 2020,
  • [6] Frequency dynamics of gain-switched injection-locked semiconductor lasers
    Dellunde, J
    Torrent, MC
    Sancho, JM
    SanMiguel, M
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (09) : 1537 - 1542
  • [7] PICOSECOND PULSE SHAPING USING DYNAMIC CARRIER HEATING IN A GAIN-SWITCHED SEMICONDUCTOR-LASER
    TOLSTIKHIN, VI
    WILLANDER, M
    MAMAEV, AN
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (05) : 2955 - 2958
  • [8] PICOSECOND OPTICAL PULSE GENERATION AT HIGH REPETITION RATE BY GAIN-SWITCHED SEMICONDUCTOR-LASER
    SUN, W
    YI, MB
    WANG, YH
    LIU, ZS
    CHINESE PHYSICS, 1992, 12 (02): : 449 - 451
  • [9] DYNAMIC THEORY OF PICOSECOND OPTICAL PULSE SHAPING BY GAIN-SWITCHED SEMICONDUCTOR-LASER AMPLIFIERS
    SCHOLL, E
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (02) : 435 - 442
  • [10] High frequency pulse generation using a gain-switched commercial semiconductor laser with strong external injection
    Anandarajah, P
    Kaszubowska, A
    Barry, LP
    2000 HIGH FREQUENCY POSTGRADUATE STUDENT COLLOQUIUM, 2000, : 121 - 126
12345