DEPOSITION OF INP ON GAAS SUBSTRATES IN THE INP-PCL3-H2 SYSTEM

被引：0
|
作者：
WAGNER, G
KUHN, G
NEUMANN, H
NOWAK, E
机构：
[1] KARL MARX UNIV,FACHBEREICH KRISTALLOG,SEKT CHEM,DDR-7030 LEIPZIG,GER DEM REP
[2] KARL MARX UNIV,SEKT PHYS,DDR-7010 LEIPZIG,GER DEM REP
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1981年 / 16卷 / 07期
关键词：
D O I：
10.1002/crat.2170160702
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：751 / 757
页数：7
相关论文
共 50 条
  • [41] EFFECTS OF ANNEALING ON PERFORMANCE OF INP SOLAR-CELLS ON GAAS SUBSTRATES
    LAMMASNIEMI, J
    RAKENNUS, K
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1993, 30 (04) : 301 - 307
  • [42] IMPROVEMENT OF INP CRYSTAL QUALITY GROWN ON GAAS SUBSTRATES AND DEVICE APPLICATIONS
    KIMURA, T
    KIMURA, T
    ISHIMURA, E
    UESUGI, F
    TSUGAMI, M
    MIZUGUCHI, K
    MUROTANI, T
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 827 - 831
  • [43] InGaAs quantum wells on wafer-bonded InP/GaAs substrates
    Hayashi, S
    Sandhu, R
    Wojtowicz, M
    Chen, G
    Hicks, R
    Goorsky, MS
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (09)
  • [44] InGaAs/InAlAs quantum wells on wafer bonded InP/GaAs substrates
    Hayashi, S
    Sandhu, R
    Chen, G
    Hicks, R
    Goorsky, MS
    2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005, : 389 - 391
  • [45] INP (AND GAAS) SUBSTRATE STABILIZATION BY THE PRESENCE OF GAAS (AND INP) IN A METAL-ORGANIC VAPOR-PHASE EPITAXY SYSTEM
    MASUT, RA
    SACILOTTI, MA
    ROTH, AP
    WILLIAMS, DF
    CANADIAN JOURNAL OF PHYSICS, 1987, 65 (08) : 1047 - 1052
  • [46] High bandwidth and low-leakage current InP-In0.53Ga0.47As-InP DBHTs on GaAs substrates
    Kim, YM
    Griffith, Z
    Rodwell, MJW
    Gossard, AC
    IEEE ELECTRON DEVICE LETTERS, 2004, 25 (04) : 170 - 172
  • [47] EPITAXIAL GROWTH OF INP ON GAAS IN AN OPEN FLOW SYSTEM
    SEKI, H
    KINOSHITA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) : 1142 - +
  • [48] GAAS SURFACE PASSIVATION BY DEPOSITION OF AN ULTRATHIN INP-RELATED LAYER
    WADA, Y
    WADA, K
    APPLIED PHYSICS LETTERS, 1993, 63 (03) : 379 - 381
  • [49] Heteroepitaxial growth of InP/GaAs(100) by metalorganic chemical vapor deposition
    Xiong, Deping
    Ren, Xiaomin
    Wang, Qi
    Zhou, Jing
    Shu, Wei
    Lue, Jihe
    Cai, Shiwei
    Huang, Hui
    Huang, Yongqing
    CHINESE OPTICS LETTERS, 2007, 5 (07) : 422 - 425
  • [50] Heteroepitaxial growth of InP/GaAs(100) by metalorganic chemical vapor deposition
    熊德平
    任晓敏
    王琦
    周静
    舒伟
    吕吉贺
    蔡世伟
    黄辉
    黄永清
    Chinese Optics Letters, 2007, (07) : 422 - 425
12345