MOBILITY OF EDGE DISLOCATIONS IN SILICON-IRON CRYSTALS

被引：384
作者：
STEIN, DF
LOW, JR
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1960年 / 31卷 / 02期
关键词：
D O I：
10.1063/1.1735574
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：362 / 369
页数：8
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