THE METAL ADATOM ON GAAS(110) - A SURFACE NEGATIVE U CENTER

被引:6
作者
ALLAN, G
LANNOO, M
机构
[1] Laboratoire d'Etudes des Surfaces et Interfaces, Institut Supérieur d'Electronique du Nord, 41, Boulevard Vauban, Lille Cedex
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 04期
关键词
D O I
10.1116/1.585752
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Metallic atom adsorption on the GaAs(110) surface is studied in the tight-binding approximation. By comparison with the experimental results and the lack of As localized states in the band gap, we first show that adsorption cannot occur on a completely unrelaxed surface. The other point concerns the Fermi level position which is located in a minimum density of states. We show that adatom relaxation is quite important and must be considered as it strongly modifies the energy to add or to remove an electron from the crystal. We show that a possible explanation of the observed adatom level energies is the existence of a negative U center.
引用
收藏
页码:2135 / 2139
页数:5
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