TRANSVERSAL TENSITY RESISTIVE EFFECT IN TEA(TCNQ)2 CRYSTALS

被引：6

作者：

KARIMOV, KS

机构：

[1] S. U. Umarov Physicotechnical Institute, Academy of Sciences of the Tajik S.S.R.

来源：

SYNTHETIC METALS | 1991年 / 44卷 / 01期

关键词：

D O I：

10.1016/0379-6779(91)91863-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An investigation is made of the transversal tensity resistive effect in the quasi-one-dimensional metal TEA(TCNQ)2 (triethylammonium-tetracyanoquinodimethane) crystals at 298 K. An elastic beam containing a semi-cylindrical groove was used for measurement. The deformation of crystals was carried out along and across the TCNQ stacks in the direction of the c and b crystal axes, respectively. The resistance was measured across the TCNQ stacks along the a axis. The transversal gauge factors of a strain gauge had different signs. The deformation dependences of the crystal resistance were linear and symmetric under tension and compression.

引用

页码：103 / 106

页数：4