INTERFACE STATE DENSITY-MEASUREMENT IN MOS STRUCTURES BY ANALYSIS OF THE THERMALLY STIMULATED CONDUCTANCE

被引：11

作者：

DEDIOS, A ^{[1
]}

CASTAN, E ^{[1
]}

BAILON, L ^{[1
]}

BARBOLLA, J ^{[1
]}

LOZANO, M ^{[1
]}

LORATAMAYO, E ^{[1
]}

机构：

[1] CSIC,CTR NACL MICROELECTR,E-28193 BARCELONA,SPAIN

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 08期

关键词：

D O I：

10.1016/0038-1101(90)90208-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The analysis of thermally stimulated conductance is a modification of the Nicollian-Goetzberger conductance technique for interface state density measurement in MOS structures. This technique relies on the measurement of the MOS structure conductance as a function of temperature, at a constant frequency. The conductance as a function of temperature shows a maximum which allows the interface state density to be determined. It is a simple method for measuring the interface state density because it is carried out at a constant frequency. In addition, the frequency can be taken low enough to prevent side effects, like those due to possible resistances in series with the MOS structures. The results obtained by this technique agree with those obtained by standard techniques like DLTS. © 1990.

引用

页码：987 / 992

页数：6

共 12 条

[1]

CASTAGNE R, 1971, SURF SCI, V28, P557

[2]

GOURRIER S, 1983, ACTA ELECTRON, V25, P217

[3] MEASUREMENT OF SEMICONDUCTOR INSULATOR INTERFACE STATES BY CONSTANT-CAPACITANCE, DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].