A NEW REVERSE BASE CURRENT (RBC) OF THE BIPOLAR-TRANSISTOR INDUCED BY IMPACT IONIZATION

被引：4
作者：
SAKUI, K
HASEGAWA, T
FUSE, T
SESHITA, T
ARITOME, S
WATANABE, S
OHUCHI, K
MASUOKA, F
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 12期
关键词：
D O I：
10.1143/JJAP.28.L2150
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L2150 / L2152
页数：3
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