PROPERTIES OF GAN TUNNELING MIS LIGHT-EMITTING-DIODES

被引：20
作者：
LAGERSTEDT, O
MONEMAR, B
GISLASON, H
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 05期
关键词：
D O I：
10.1063/1.325137
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2953 / 2957
页数：5
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