GROWTH OF HYDROGENATED AMORPHOUS-SILICON BY AN INDUCTIVE COUPLING GLOW-DISCHARGE REACTOR

被引：1

作者：

YOKOTA, K

NAKAYAMA, S

OHNO, Y

KATAYAMA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 06期

关键词：

D O I：

10.1143/JJAP.26.965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：965 / 966

页数：2

共 50 条

[1] THE GROWTH OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON
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[2] THE NUCLEATION AND GROWTH OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON
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[3] INSITU ELLIPSOMETRY STUDIES OF THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON BY GLOW-DISCHARGE
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[4] PLASMA SPECTROSCOPY GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON
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[5] DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON BY AN INDUCTIVELY COUPLED GLOW-DISCHARGE REACTOR WITH SHIELD ELECTRODES
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[6] MECHANISMS INVOLVED IN THE GLOW-DISCHARGE DEPOSITION OF DOPED HYDROGENATED AMORPHOUS-SILICON
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[7] MECHANISM OF PHOTOLUMINESCENCE IN HYDROGENATED AND CHLORINATED AMORPHOUS-SILICON PREPARED BY GLOW-DISCHARGE
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[8] THE EFFICIENCY OF GAS USAGE IN GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON
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[9] BIAS EFFECTS ON THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILM IN A GLOW-DISCHARGE
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[10] HYDROGENATED AMORPHOUS-SILICON FILMS BY 60 HZ GLOW-DISCHARGE DEPOSITION
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