ELECTRICAL PROPERTIES OF VAPOR-GROWN GE JUNCTIONS

被引：10
作者：
OROURKE, MJ
MARINACE, JC
ANDERSON, RL
WHITE, WH
机构：
来源：
IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1960年 / 4卷 / 03期
关键词：
D O I：
10.1147/rd.43.0256
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：256 / 263
页数：8
相关论文
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