MOLECULAR-BEAM EPITAXIAL-GROWTH AND SURFACE-DIFFUSION

被引：94

作者：

KESSLER, DA

LEVINE, H

SANDER, LM

机构：

[1] UNIV CALIF SAN DIEGO,INST NONLINEAR SCI,LA JOLLA,CA 92093

[2] UNIV CALIF SAN DIEGO,DEPT PHYS,LA JOLLA,CA 92093

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.69.100

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate the statistical properties of the surface of thin films grown by molecular-beam epitaxy (MBE). We present and analyze a simple model of MBE growth which incorporates surface diffusion and deposition in a physically correct manner. The short-time behavior does not correspond to that predicted by the continuum model of Villain, Das Sarma, and others. At long times, the model is governed by Kardar-Parisi-Zhang dynamics.

引用

页码：100 / 103

页数：4

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