The Influence of Thermal History During Solidification of The Polyvinylidene Fluoride on The Characteristics of Dielectric Relaxation

By the method of dielectric relaxation in a wide frequency range investigated relaxation process at temperatures near the melting point of two samples of polyvinylidene fluoride, which were obtained under different conditions. The observed dielectric relaxation process associated with the formation of space charge due to the presence of impurity carriers. The relaxation time and the intensity of this process decreases when the sample grows, the degree of crystallinity. This refers to the increase in the mobility of the impurity of the carriers that move in the amorphous regions. It is assumed that the isothermal crystallization can be aggregation of different kinds of chemical defects. Such defects include: end groups, branching, defects of the type "head to head, tail to tail" HHTT. Such aggregation may contribute to the higher mobility of the impurity of the carriers.