ATOMIC LAYER GROWTH OF BI-SR-CA-CU-O BY MOLECULAR-BEAM EPITAXY USING OZONE UNDER UV IRRADIATION

被引：11

作者：

YOKOYAMA, S ^{[1
]}

ISHIBASHI, T ^{[1
]}

YAMAGAMI, M ^{[1
]}

KAWABE, M ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST MAT SCI,SAKURA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 1B期

关键词：

OXIDE SUPERCONDUCTOR; BI-SR-CA-CU-O; MOLECULAR BEAM EPITAXY; OZONE; ULTRAVIOLET LIGHT; LAYER-BY-LAYER GROWTH; RECONSTRUCTION;

D O I：

10.1143/JJAP.30.L106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bi-Sr-Ca-Cu-O thin film with a zero-resistance critical temperature of 58 K has been grown by the molecular beam epitaxy technique in an ozone and oxygen mixture ambient under irradiation of ultraviolet light without postheat treatment. In situ reflection high-energy electron diffraction measurement during the layer-by-layer growth reveals that the reconstruction takes place just after completing the deposition of a single unit layer (a half-unit cell).

引用

页码：L106 / L109

页数：4

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