DEEP LEVEL IN ZN-DOPED LIQUID PHASE EPITAXIAL GAAS

被引：5
|
作者：
SU, JL
NISHI, Y
MOLL, JL
机构：
来源：
SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 03期
关键词：
D O I：
10.1016/0038-1101(71)90042-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：262 / &
相关论文
共 50 条
  • [1] LIQUID-PHASE EPITAXIAL-GROWTH OF ZN-DOPED AND S-DOPED GAAS
    ISHII, M
    TANAKA, T
    SUSAKI, W
    JOURNAL OF CRYSTAL GROWTH, 1979, 46 (02) : 265 - 268
  • [2] A DEEP LEVEL IN ZN-DOPED INGAAIP
    NOZAKI, C
    OHBA, Y
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) : 5394 - 5397
  • [3] LUMINESCENCE IN ZN-DOPED GAAS
    ARNOLD, GW
    BRICE, DK
    PHYSICAL REVIEW, 1969, 178 (03): : 1399 - &
  • [4] ELECTRICAL CHARACTERIZATION OF GAAS EPITAXIAL LAYERS GROWN BY CSVT FROM ZN-DOPED GAAS SOURCES
    COSSEMENT, D
    DODELET, JP
    BRETAGNON, T
    JEAN, A
    LOMBOS, BA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (03) : 830 - 834
  • [5] ACTIVATION ENERGY OF HOLES IN ZN-DOPED GAAS
    HILL, DE
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1815 - &
  • [6] Microdefects in Zn-doped GaAs single crystals
    Bublik, VT
    Shcherbachev, KD
    KRISTALLOGRAFIYA, 1996, 41 (05): : 913 - 917
  • [7] HOLE MOBILITY IN HEAVILY ZN-DOPED GAAS
    NOWAK, E
    NEUMANN, H
    KUHN, G
    CRYSTAL RESEARCH AND TECHNOLOGY, 1989, 24 (01) : K13 - K15
  • [8] BAND TAIL CONDUCTION IN ZN-DOPED GAAS
    NEUMANN, H
    JACOBS, B
    HORIG, W
    CRYSTAL RESEARCH AND TECHNOLOGY, 1990, 25 (03) : 343 - 348
  • [9] HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS
    ERMANIS, F
    WOLFSTIR.K
    JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 1963 - &
  • [10] CATHODOLUMINESCENCE OF UNDOPED AND ZN-DOPED GAN EPITAXIAL LAYERS
    MARASINA, LA
    PIKHTIN, AN
    PICHUGIN, IG
    SOLOMONOV, AV
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1976, 38 (02): : 753 - 760
12345