GAIN CHARACTERISTICS OF STRAINED QUANTUM WELL LASERS

被引：51
作者：
WELCH, DF
STREIFER, W
SCHAUS, CF
SUN, S
GOURLEY, PL
机构：
[1] UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,ALBUQUERQUE,NM 87131
[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87175
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 01期
关键词：
D O I：
10.1063/1.102647
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InGaAs/AlGaAs laser diode arrays fabricated with differing amounts of In in the quantum well active layer are characterized by threshold currents of 115 A/cm2, transparency currents of 50 A/cm2, optical losses of 3 cm-1, and wavelengths to 960 nm for In compositions of 20%. Gain coefficient measurements indicate an increase from 0.0535 to 0.0691 cm μm/A for quantum well lasers with 0% InAs and 10-20% InAs, respectively. The maximum output power achieved for a device with a 100 μm aperture is 3 W cw.
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页码：10 / 12
页数：3
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