FACET GROWTH OF ALGAAS ON GAAS WITH SIO2 GRATINGS BY MOCVD AND APPLICATIONS TO QUANTUM WELL WIRES

被引：70
作者：
ANDO, S
FUKUI, T
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 04期
关键词：
D O I：
10.1016/0022-0248(89)90301-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：646 / 652
页数：7
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