CURRENT-VOLTAGE CHARACTERISTICS OF A 4-LAYER STRUCTURE WITH DEEP IMPURITY LEVELS

被引：0
作者：
OSIPOV, VV
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1968年 / 2卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：184 / &
相关论文
共 10 条
  • [1] KAZARINOV RF, 1968, SOV PHYS SEMICOND+, V1, P1078
  • [2] KAZARINOV RF, 1967, FIZ TEKH POLUPROV, V1, P1293
  • [3] THE ELECTRICAL CHARACTERISTICS OF SILICON P-N-P-N TRIODES
    MACKINTOSH, IM
    [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1229 - 1235
  • [4] P-N-P-N TRANSISTOR SWITCHES
    MOLL, JL
    TANENBAUM, M
    GOLDEY, JM
    HOLONYAK, N
    [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (09): : 1174 - 1182
  • [5] OSIPOV VV, 1968, SOV PHYS SEMICOND+, V1, P1486
  • [6] OSIPOV VV, 1968, FIZIKA TEKHNIKA POLU, V2, P220
  • [7] OSIPOV VV, 1967, FIZ TEKH POLUPROV, V1, P1795
  • [8] RYABINKIN YS, 1965, RADIOELEKTRONIKA, V10, P2205
  • [9] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
    SHOCKLEY, W
    READ, WT
    [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842
  • [10] SHOCKLEY W, Patent No. 2855524
1