THE EFFECT OF DOPING DENSITY AND INJECTION LEVEL ON MINORITY-CARRIER LIFETIME AS APPLIED TO BIFACIAL DENDRITIC WEB SILICON SOLAR-CELLS

被引：27

作者：

MEIER, DL ^{[1
]}

HWANG, JM ^{[1
]}

CAMPBELL, RB ^{[1
]}

机构：

[1] WESTINGHOUSE ELECT CORP,DIV ADV ENERGY SYST,PITTSBURGH,PA 15236

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 01期

关键词：

BIFACIAL DENDRITIC WEB - DOPING DENSITY EFFECTS - INJECTION LEVEL - MINORITY-CARRIER LIFETIME - RECOMBINATION MODELING;

D O I：

10.1109/16.2417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：70 / 79

页数：10

共 26 条

[1]

[Anonymous], ANN BOOK ASTM STANDA

[2] DETERMINATION OF RECOMBINATION CENTER POSITION FROM THE TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN THE BASE REGION OF P-N-JUNCTION SOLAR-CELLS [J].

BHATTACHARYA, DK ;

MANSINGH, A ;

SWARUP, P .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2942-2947

[3] EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J].

BOURRET, A ;

THIBAULTDESSEAUX, J ;

SEIDMAN, DN .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :825-836

[4]

CAMPBELL RB, 1986, 169TH EL SOC M BOST, P454

[5]

CHENG LJ, 1985, 18TH IEEE PHOT SPEC, P1084

[6] INTERFACE STATES IN SI-SIO2 INTERFACES [J].

DEULING, H ;

KLAUSMANN, E ;

GOETZBERGER, A .

SOLID-STATE ELECTRONICS, 1972, 15 (05) :559-+

[7] TRAP SATURATION IN SILICON SOLAR CELLS [J].

FABRE, E ;

MAUTREF, M ;

MIRCEA, A .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :239-241

[8]

GRAFF K, 1973, SEMICONDUCTOR SILICO, P170

[9]

GREEN MA, 1985, 18TH IEEE PHOT SPEC, P39

[10] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

← 1 2 3 →