LIQUID-PHASE EPITAXIAL-GROWTH OF BURIED HETEROSTRUCTURE DEVICES

被引：1

作者：

LOGAN, RA

机构：

[1] AT&T, Murray Hill, NJ, USA, AT&T, Murray Hill, NJ, USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 83卷 / 02期

关键词：

D O I：

10.1016/0022-0248(87)90012-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：233 / 237

页数：5

共 10 条

[1] PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH [J].

ANTYPAS, GA .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :64-65

[2]

CHU SNG, 1986, COMMUNICATION

[3] SINGLE-MODE OPERATION OF BURIED HETEROSTRUCTURE LASERS BY LOSS STABILIZATION [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (11) :2196-2204

[4] FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS [J].

HIRAO, M ;

DOI, A ;

TSUJI, S ;

NAKAMURA, M ;

AIKI, K .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4539-4540

[5] PRESERVING INP SURFACE CORRUGATIONS FOR 1.3-MU-M GAINASP-INP DFB LASERS FROM THERMAL DEFORMATION DURING LPE PROCESS [J].

KINOSHITA, J ;

OKUDA, H ;

UEMATSU, Y .

ELECTRONICS LETTERS, 1983, 19 (06) :215-216

[6] LIQUID-PHASE EPITAXIAL-GROWTH ON (111)IN PLANES OF INP [J].

LOGAN, RA ;

HENRY, CH ;

MERRITT, FR ;

MAHAJAN, S .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5462-5463

[7] LIQUID-PHASE EPITAXIAL-GROWTH OF INP USING IN1-XSNX MELTS [J].

LOGAN, RA ;

TEMKIN, H .

JOURNAL OF CRYSTAL GROWTH, 1986, 76 (01) :17-30

[8] GAINASP-INP BURIED HETEROSTRUCTURE FORMATION BY LIQUID-PHASE EPITAXY [J].

LOGAN, RA ;

TEMKIN, H ;

MERRITT, FR ;

MAHAJAN, S .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1275-1277

[9]

MAHAJAN S, 1985, I PHYS C SER, V76, P245

[10] BURIED-HETEROSTRUCTURE ALGAAS LASERS [J].

SAITO, K ;

ITO, R .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :205-215

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