THEORY OF QUANTUM EFFICIENCY IN SILICON AND GERMANIUM

被引：17

作者：

ANTONCIK, E

GAUR, NKS

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 04期

关键词：

D O I：

10.1088/0022-3719/11/4/017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：735 / 744

页数：10

共 18 条

[1]

Antoncik E., 1968, Theory of condensed matter, P873

[2] QUANTUM EFFICIENCY AND OVERLAP INTEGRALS IN INSB [J].

ANTONCIK, E .

[3] IMPACT IONIZATION AND QUANTUM EFFICIENCY IN SEMICONDUCTORS [J].

ANTONCIK, E .

[4]

Antoncik E., 1970, Radiation Effects, V5, P1, DOI 10.1080/00337577008234988

[5]

ANTONCIK E, 1968, CZECH J PHYS B, V18, P170

[6]

ANTONCIK E, 1968, P INT C SEMICONDUCTO, P848

[7]

Antoncik E, 1957, CZECH J PHYS, V7, P674

[8]

ANTONCIK E, 1966, SEMICONDUCT SEMIMET, V2, P245

[9]

BRITSYN KI, 1960, OPT SPECTROSC, V8, P452

[10] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J].

CARDONA, M ;

POLLAK, FH .

PHYSICAL REVIEW, 1966, 142 (02) :530-&