HOT-ELECTRON FARADAY EFFECT IN SEMICONDUCTORS

被引：7

作者：

ARORA, AK

机构：

[1] Physics Department, Indian Institute of Technology

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1968年 / 1卷 / 04期

关键词：

D O I：

10.1088/0022-3727/1/4/421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A general analytical treatment is presented for the Faraday rotation and ellipticity in the case of hot electrons in semiconductors for a large range of heating fields. Only the acoustic phonon scattering of carriers is considered.

引用

页码：521 / &

共 5 条

[1] FARADAY EFFECT IN SEMICONDUCTORS
BOSWARVA, IM
HOWARD, RE
LIDIARD, AB
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 269 (1336) : 125 - +
[2] GULYAEV YV, 1965, JETP LETT, V3, P81
[3] CYCLOTRON RESONANCE AND THE FREE-CARRIER MAGNETO-OPTICAL PROPERTIES OF A SEMICONDUCTOR
HINDLEY, NK
[J]. PHYSICA STATUS SOLIDI, 1964, 7 (01): : 67 - 80
[4] SUBASHIEV AV, 1965, SOV PHYS-SOLID STATE, V7, P751
[5] YAMASHITA J, 1954, PROG THEOR PHYS, V12, P443

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