DEPOSITION OF AMORPHOUS SILICON FILMS FROM GLOW-DISCHARGE PLASMAS OF SILANE

被引：56

作者：

BRODSKY, MH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1016/0040-6090(77)90095-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L23 / L25

页数：3

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JOURNAL OF MACROMOLECULAR SCIENCE-CHEMISTRY, 1974, A 8 (02) :373-391

SPANIER, EJ ;

MACDIARMID, AG .

[7]

Spear W. E., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P1

[8] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949

[9]

THOMSON JJ, 1933, CONDUCTION ELECTRICI, V2, pCH8