CHARACTERIZATION OF EUROPIUM IMPLANTED LINBO3

被引:14
|
作者
MORETTI, P [1 ]
CANUT, B [1 ]
RAMOS, SMM [1 ]
BRENIER, R [1 ]
THEVENARD, P [1 ]
POKER, D [1 ]
DACUNHA, JBM [1 ]
AMARAL, L [1 ]
VASQUEZ, A [1 ]
机构
[1] UFRGS,INST FIS,BR-15051 PORTO ALEGRE,RS,BRAZIL
关键词
D O I
10.1557/JMR.1993.2679
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
LiNbO3 single crystals were implanted at room temperature with Eu+ ions at 70 keV with fluence ranging from 0.5 to 5 X 10(16) ions . cm-2. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation states of the cations have been determined by x-ray photoelectron spectroscopy (XPS). Following implantation, a fully amorphized layer of 60 nm is generated, even for the lowest fluence employed. Subsequent annealing in air, in the range 800-1250 K, was applied to restore tentatively the crystallinity and promote the substitutional incorporation of Eu in the crystal. Only a partial recrystallization of the damaged layer was observed. For as-implanted samples, XPS spectra clearly reveal europium in Eu2+ and Eu3+ states, and the Nb5+ ions are driven to lower charge states.
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页码:2679 / 2685
页数:7
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