EFFECTS OF ORDERING ON THE OPERATION OF ALGAINP LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：18

作者：

NAKANO, K

TODA, A

YAMAMOTO, T

ISHIBASHI, A

机构：

[1] SONY Corporation Research Center, Hodogaya, Yokohama 240

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 16期

关键词：

D O I：

10.1063/1.108376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed large differences in the lasing wavelength and threshold current for [110BAR]- and [110]-striped AlGaInP lasers that are fabricated from a single wafer grown by metalorganic chemical vapor deposition. With the laser stripe aligned parallel to the [110] direction, the lasing wavelength is about 6 nm shorter than that with the [110BAR] stripe. The threshold current (I(th)) of the [110]-striped laser is 10 mA higher than that of the [110BAR]-striped laser. The differences are found to be well explained by the splitting of the valence band due to the (111) ordering in the AlGaInP lasers.

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页码：1959 / 1961

页数：3

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