ON THE THEORY OF THE DIFFUSION OF GOLD INTO SILICON

被引：34

作者：

SEEGER, A ^{[1
]}

机构：

[1] UNIV STUTTGART,INST THEORET & ANGEWANDTE PHYS,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 61卷 / 02期

关键词：

D O I：

10.1002/pssa.2210610225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：521 / 529

页数：9

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[3] PROPERTIES OF GOLD IN SILICON [J].

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[4] MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J].

FRANK, FC ;

TURNBULL, D .

PHYSICAL REVIEW, 1956, 104 (03) :617-618

[5]

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[6]

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[7]

Lambert J. L., 1972, Wissenschaftliche Berichte AEG-Telefunken, V45, P153

[8]

Magnus W., 1966, FORMULAS THEOREMS SP, V3rd

WILCOX, WR ;

LACHAPELLE, TJ ;

FORBES, DH .

[10] MECHANISM OF GOLD DIFFUSION INTO SILICON [J].

WILCOX, WR ;

LACHAPELLE, TJ .