THICK EPITAXIAL FILMS OF PB1-XSNXTE

被引：32

作者：

BIS, RF

DIXON, JR

LOWNEY, JR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1972年 / 9卷 / 01期

关键词：

D O I：

10.1116/1.1316562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：226 / &

共 17 条

[1] THICK EPITAXIAL FILMS OF CUBIC ZINC SULFIDE DEPOSITED BY A HOT WALL TECHNIQUE [J].

BEHRNDT, ME ;

MORENO, SC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (03) :494-+

[2] APPLICABILITY OF VEGARDS LAW TO PBXSN1-XTE ALLOY SYSTEM [J].

BIS, RF ;

DIXON, JR .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) :1918-&

[3] ALLOY FILMS OF PBTEXSE1-X [J].

BIS, RF ;

ZEMEL, JN .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :228-&

[4]

Bylander E. G., 1966, MATER SCI ENG, V1, P190

[5] BAND STRUCTURE AND LASER ACTION IN PBXSN1-XTE [J].

DIMMOCK, JO ;

MELNGAIL.I ;

STRAUSS, AJ .

PHYSICAL REVIEW LETTERS, 1966, 16 (26) :1193-&

[6]

DIMMOCK JO, TO BE PUBLISHED

[7] BAND INVERSION AND ELECTRICAL PROPERTIES OF PBXSN1-XTE [J].

DIXON, JR ;

BIS, RF .

PHYSICAL REVIEW, 1968, 176 (03) :942-+

[8] INFLUENCE OF BAND INVERSION UPON ELECTRICAL PROPERTIES OF PBO.77SNO.23SE [J].

DIXON, JR ;

HOFF, GF .

PHYSICAL REVIEW B, 1971, 3 (12) :4299-&

[9] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J].

HOLLOWAY, H ;

LOGOTHETIS, EM ;

WILKES, E .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3543-+

[10] EPITAXIAL GROWTH OF SMALL BANDGAP SEMICONDUCTORS [J].

HOLLOWAY, H ;

HOHNKE, DK ;

LOGOTHETIS, EM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01) :146-+

← 1 2 →