ETCHING OF GERMANIUM CRYSTALS BY ION BOMBARDMENT

被引：20

|

作者：

WEHNER, GK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1958年 / 29卷 / 02期

关键词：

D O I：

10.1063/1.1723070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：217 / 221

页数：5

相关论文

共 50 条

[1] ION-BOMBARDMENT ETCHING OF SILICON AND GERMANIUM
DILLON, JA
OMAN, RM
JOURNAL OF APPLIED PHYSICS, 1960, 31 (01) : 26 - 28
[2] WORK-FUNCTION STUDIES OF GERMANIUM CRYSTALS CLEANED BY ION BOMBARDMENT
DILLON, JA
FARNSWORTH, HE
JOURNAL OF APPLIED PHYSICS, 1957, 28 (02) : 174 - 184
[3] CONVERSION OF CRYSTALLINE GERMANIUM TO AMORPHOUS GERMANIUM BY ION BOMBARDMENT
PARSONS, JR
PHILOSOPHICAL MAGAZINE, 1965, 12 (120): : 1159 - &
[4] ETCHING OF REFRACTORIES AND CERMETS BY ION BOMBARDMENT
BIERLEIN, TK
NEWKIRK, HW
MASTEL, B
JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) : 1374 - 1374
[5] IMPROVED METHOD OF ETCHING BY ION BOMBARDMENT
BIERLEIN, TK
MASTEL, B
REVIEW OF SCIENTIFIC INSTRUMENTS, 1959, 30 (09) : 832 - 833
[6] ETCHING OF REFRACTORIES AND CERMETS BY ION BOMBARDMENT
BIERLEIN, TK
NEWKIRK, HW
MASTEL, B
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1958, 41 (06) : 196 - 200
[7] BEHAVIOR OF GERMANIUM IMPLANTED IN GAAS BY ION BOMBARDMENT
ZELEVINSKAYA, VM
KACHURIN, GA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (06): : 1011 - +
[8] THE ION BOMBARDMENT, OXIDATION AND REGENERATION OF GERMANIUM SURFACES
WOLSKY, SP
ZDANUK, EJ
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 124 - 130
[9] POSITIVE-ION BOMBARDMENT OF GERMANIUM AND SILICON
WOLSKY, SP
PHYSICAL REVIEW, 1957, 108 (05): : 1131 - 1136
[10] EFFECT OF ION BOMBARDMENT ON ELECTRICAL CONDUCTIVITY OF GERMANIUM
PRIMAK, W
DAYAL, Y
PHYSICAL REVIEW, 1968, 175 (03): : 1033 - &

← 1 2 3 4 5 →